X-RAY PHOTOELECTRON AND AUGER-ELECTRON DIFFRACTION PROBING OF GE HETEROEPITAXY ON SI (001) 2X1

Epitaxial molecular beam epitaxy growth of nanometric Ge layers on Si (00 1) 2 X 1 has been investigated, in situ, by x-ray Si 2p photoelect ron diffraction and Auger Ge LMM electron diffraction which consist es sentially in preferential scattering of electrons in the direction of interatomic axes. Particular attention was paid to measuring the contr asts of this anisotropic emission in the (110BAR) plane as a function of deposition parameters. It can thus be determined how crystalline ma terial quality and epitaxial perfection are affected by the residual p ressure below 5 X 10(-8) mbar, the substrate temperature decrease to r oom temperature, the deposition rate, and the Ge overlayer thickness.