HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED AT HIGH SUBSTRATE-TEMPERATURE - PROPERTIES AND LIGHT-INDUCED DEGRADATION

Of the different deposition parameters, the substrate temperature T(s) has a profound effect on the microstructure and optoelectronic proper ties of hydrogenated amorphous silicon (a-Si:H). A detailed study was done to evaluate a-Si:H materials deposited at high substrate temperat ures (greater-than-or-equal-to 325-degrees-C). Their characteristics a nd nature of light induced degradation were compared to a-Si:H deposit ed at 200-degrees-C. Electrical properties were studied with coplanar electrode structure as well as on Schottky barrier devices. Absorption measurements in the visible and infrared regions and spin-density mea surements were carried out. For high T(s) (>325-degrees-C) the presenc e of acceptorlike defects are indicated in addition to the neutral dan gling bonds. Annealing recovery from the light soaked state is slower as compared to a film deposited at 200-degrees-C. The results have bee n discussed in connection with the role of hydrogen motion in the anne aling of light induced defects.