ON THE HOT-CARRIER EFFECTS IN 1.3 MU-M INGAASP DIODES

Authors
HONC T ZAVADIL J
Citation
T. Honc et J. Zavadil, ON THE HOT-CARRIER EFFECTS IN 1.3 MU-M INGAASP DIODES, Journal of applied physics, 73(11), 1993, pp. 7978-7980
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
73
Issue
11
Year of publication
1993
Pages
7978 - 7980
Database
ISI
SICI code
0021-8979(1993)73:11<7978:OTHEI1>2.0.ZU;2-4
Abstract
Hot-carrier effects induced by injected carriers are reported for In1- xGaxAsyP1-y 1.3 mum laser diodes. These effects are manifested by chan ges of electroluminescent spectra produced by the variation of injecte d current and heat-sink temperature. By analyzing the positions of the peaks of envelope spectral curves and of the individual Fabry-Perot p eaks we come to the conclusion that carrier heating and not that of th e lattice is responsible for the observed effects.