Authors
Citation
Rt. Tung, CURRENT TRANSPORT IN PD N-INP DIODES FORMED AT ROOM AND LOW-TEMPERATURE - COMMENT, Journal of applied physics, 73(11), 1993, pp. 7993-7993
Citations number
5
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
73
Issue
11
Year of publication
1993
Pages
7993 - 7993
Database
ISI
SICI code
0021-8979(1993)73:11<7993:CTIPND>2.0.ZU;2-E
Abstract
It is pointed out that, under most circumstances, current transport ch
aracteristics observed at Schottky barrier junctions cannot be used to
unambiguously identify the mechanism responsible for electron conduct
ion. This practice, however, is quite common and is shown to lead to a
n incorrect conclusion in a recent article [Z. Q. Shi and W. A. Anders
on, J. Appl. Phys. 72, 3803 (1992)].