QUANTUM STATE CONTROL IN SEMICONDUCTOR-PN-JUNCTIONS .2. CONTROLLED SPONTANEOUS EMISSION IN QUANTUM-WELL MICROCAVITY LASERS

Citation
Y. Yamamoto et al., QUANTUM STATE CONTROL IN SEMICONDUCTOR-PN-JUNCTIONS .2. CONTROLLED SPONTANEOUS EMISSION IN QUANTUM-WELL MICROCAVITY LASERS, International journal of modern physics b, 7(8), 1993, pp. 1653-1695
Citations number
67
Categorie Soggetti
Physics, Condensed Matter","Physycs, Mathematical","Physics, Applied
ISSN journal
02179792
Volume
7
Issue
8
Year of publication
1993
Pages
1653 - 1695
Database
ISI
SICI code
0217-9792(1993)7:8<1653:QSCIS.>2.0.ZU;2-L
Abstract
The principles and applications of controlled spontaneous emission in semiconductor microcavities are reviewed. The coupling efficiency of s pontaneous emission into a lasing mode and the spontaneous emission ra te can be modified by various microcavity structures. By increasing th e coupling efficiency, semiconductor lasers with a very low threshold current, and semiconductors lasers and light emitting diodes with a hi gh quantum efficiency, broad modulation bandwidth and low noise are ex pected.