COMPARISON OF ELECTRONIC TRANSPORT IN BORON-DOPED HOMOEPITAXIAL, POLYCRYSTALLINE, AND NATURAL SINGLE-CRYSTAL DIAMOND

Hall-effect and resistivity,measurements were performed on simultaneou sly deposited B-doped homoepitaxial and polycrystalline diamond films, as well as a (100)-oriented type-IIb natural diamond crystal, over a temperature range of 140-600 K. At 298 K, the respective Hall mobiliti es for the homoepitaxial and polycrystalline films were 519 and 33 cm2 /V S, while the active carrier concentrations were both approximately 2 X 10(14) CM-3 . For the natural diamond, a Hall mobility of 564 cm2/ V s and a carrier concentration of 2 X 10(13) CM-3 were measured at ro om temperature. A comparison of the transport behavior of the three sp ecimens indicates that the electronic properties of diamond grown by c hemical vapor deposition are potentially of equal or greater quality t han natural diamond and that the transport properties of polycrystalli ne films are severely degraded by the effects of grain boundaries.