OBSERVATION OF ELECTROMIGRATION OF HYDROGEN IN POLYCRYSTALLINE SILICON USING POLY EMITTER BIPOLAR-TRANSISTORS

Electromigration of hydrogen inside polycrystalline silicon (polysilic on) has been observed for the first time. Experiments were conducted o n polysilicon emitter (poly emitter) n-p-n transistors with and withou t atomic hydrogen inside polysilicon. The current gain (beta) of n-p-n was selected to monitor electromigration of hydrogen during current s tress because of its high sensitivity to hydrogen passivation of dangl ing bonds. The major characteristics of hydrogen electromigration are shown in this letter.