TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER/

Authors
TALIN AA OHLBERG DAA WILLIAMS RS SULLIVAN P KOUTSELAS I WILLIAMS B KAVANAGH KL
Citation
Aa. Talin et al., TIME-DEPENDENT BALLISTIC ELECTRON-EMISSION MICROSCOPY STUDIES OF A AU(100)GAAS INTERFACE WITH A NATIVE-OXIDE DIFFUSION BARRIER/, Applied physics letters, 62(23), 1993, pp. 2965-2966
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
23
Year of publication
1993
Pages
2965 - 2966
Database
ISI
SICI code
0003-6951(1993)62:23<2965:TBEMSO>2.0.ZU;2-O
Abstract
Ballistic electron emission microscopy (BEEM) has been used to investi gate the effects of a thin interfacial native oxide layer on the elect ronic properties and stability of a Au/(100) n-GaAs contact as a funct ion of time. The oxide had no effect on the electronic band structure at the interface measured with BEEM, as compared to similar contacts w ithout a diffusion barrier. In addition, the oxide greatly enhanced th e electrical homogeneity of the interface and prolonged the ability of the diode to transmit ballistic electrons to more than 35 days.