I. Maekawa et al., IMAGING-PLATE PLANE-WAVE X-RAY TOPOGRAPHY OF LOCAL LATTICE DISTRIBUTION DUE TO GROWTH STRIATIONS IN SILICON-CRYSTALS, Applied physics letters, 62(23), 1993, pp. 2980-2982
A newly developed imaging-plate plane-wave x-ray topography (IPPWT) me
thod has been successfully applied to the quantitative analysis of loc
al lattice distortion due to growth striations in magnetic-field-appli
ed Czochralski silicon single crystals. IPPWT was found to possess suf
ficient spatial resolution to accurately measure variations of growth-
induced local lattice distortions (DELTAd/d and DELTAalpha. The advant
ageous features of IPPWT, in comparison with conventional photographic
-plate plane-wave x-ray topography, are a wide latitude in x-ray expos
ure conditions, better x-ray intensity linearity for performing quanti
tative analysis, and convenience in image processing and data handling
.