IMAGING-PLATE PLANE-WAVE X-RAY TOPOGRAPHY OF LOCAL LATTICE DISTRIBUTION DUE TO GROWTH STRIATIONS IN SILICON-CRYSTALS

Citation
I. Maekawa et al., IMAGING-PLATE PLANE-WAVE X-RAY TOPOGRAPHY OF LOCAL LATTICE DISTRIBUTION DUE TO GROWTH STRIATIONS IN SILICON-CRYSTALS, Applied physics letters, 62(23), 1993, pp. 2980-2982
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
23
Year of publication
1993
Pages
2980 - 2982
Database
ISI
SICI code
0003-6951(1993)62:23<2980:IPXTOL>2.0.ZU;2-2
Abstract
A newly developed imaging-plate plane-wave x-ray topography (IPPWT) me thod has been successfully applied to the quantitative analysis of loc al lattice distortion due to growth striations in magnetic-field-appli ed Czochralski silicon single crystals. IPPWT was found to possess suf ficient spatial resolution to accurately measure variations of growth- induced local lattice distortions (DELTAd/d and DELTAalpha. The advant ageous features of IPPWT, in comparison with conventional photographic -plate plane-wave x-ray topography, are a wide latitude in x-ray expos ure conditions, better x-ray intensity linearity for performing quanti tative analysis, and convenience in image processing and data handling .