EPITAXIAL-GROWTH OF (HG,MN)TE BY THE INTERDIFFUSED MULTILAYER PROCESS

Epitaxial films of (Hg,Mn)Te have been grown by metalorganic vapor pha se epitaxy using the interdiffused multilayer process (IMP), on GaAs ( 100) substrates with a approximately 1 mum buffer layer of CdTe. In or der to grow the MnTe component, it was found necessary to grow at 380- degrees-C with a precursor partial pressure ratio (Mn:Te) of 5-8. The IMP layers were found to be more uniform in composition and thickness than comparable layers of (Hg,Mn)Te grown by the more conventional dir ect alloy growth method. X-ray rocking curve widths for IMP layers wer e typically approximately 200'' with a variation across the layer of a pproximately 10%. Variations in composition were < 10%.