RESONANT-TUNNELING THROUGH MIXED QUASI-BOUND STATES IN A TRIPLE-WELL STRUCTURE

Authors
BROWN ER PARKER CD CALAWA AR MANFRA MJ
Citation
Er. Brown et al., RESONANT-TUNNELING THROUGH MIXED QUASI-BOUND STATES IN A TRIPLE-WELL STRUCTURE, Applied physics letters, 62(23), 1993, pp. 3016-3018
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
23
Year of publication
1993
Pages
3016 - 3018
Database
ISI
SICI code
0003-6951(1993)62:23<3016:RTMQSI>2.0.ZU;2-R
Abstract
A triple-well resonant-tunneling structure made from the In0.53Ga0.47A s/AlAs material system yields a broad negative differential resistance (NDR) region without the precipitous drop in current that occurs in s ingle-well structures. This NDR characteristic is attributed to resona nt tunneling through mixed quasibound states. A diode made from this s tructure is used to generate a nearly constant power of 0.5 mW up to 1 6 GHz.