DOMAIN GROWTH OF DY2O3 BUFFER LAYERS ON SRTIO3

Citation
A. Catana et Jp. Locquet, DOMAIN GROWTH OF DY2O3 BUFFER LAYERS ON SRTIO3, Journal of materials research, 8(6), 1993, pp. 1373-1378
Citations number
16
Categorie Soggetti
Material Science
ISSN journal
08842914
Volume
8
Issue
6
Year of publication
1993
Pages
1373 - 1378
Database
ISI
SICI code
0884-2914(1993)8:6<1373:DGODBL>2.0.ZU;2-C
Abstract
Dy2O3 layers have been grown on SrTiO3 by molecular beam epitaxy. X-ra y and electron diffraction patterns clearly show that Dy2O3 grows epit axially on SrTiO3 with {100} planes parallel to the substrate surface. Transmission electron microscopy reveals that the Dy2O3 film breaks u p into small domains (10-40 nm). This leads to the formation of terrac es which limits the structural perfection of thin overgrown DyBa2Cu3O7 by introducing steps and small misorientations (within 3-degrees). Th e resulting surface corrugation does not preclude the growth of epitax ial c-axis DyBa2Cu3O7 films with a T(c0) of 86 K. Crystallographic ana lysis and image calculations show that the domain growth of Dy2O3 is a ssociated with the formation of 90-degrees rotation twins.