SPUTTERING AND CRATER FORMATION IN OXIDIC MATERIALS DUE TO ION-INDUCED SPUTTERING DEPENDENT ON ENERGY

Authors
PRIGGEMEYER S HEILAND W
Citation
S. Priggemeyer et W. Heiland, SPUTTERING AND CRATER FORMATION IN OXIDIC MATERIALS DUE TO ION-INDUCED SPUTTERING DEPENDENT ON ENERGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 78(1-4), 1993, pp. 198-203
Citations number
8
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
78
Issue
1-4
Year of publication
1993
Pages
198 - 203
Database
ISI
SICI code
0168-583X(1993)78:1-4<198:SACFIO>2.0.ZU;2-J
Abstract
The etch rate of material due to ion bombardment is the amount of mate rial removed per unit time at a given set of beam parameters. Usually the etch rate is given in units of length/time. The length is measured as the depth of the craters formed by the ion beam. With insulating m aterials we obtain a dependence of the etch rate on charging effects. Also the crater formation is influenced by charging, i.e. ''walls'' ar e found to build around the craters. We studied these effects dependen t on energy in different oxidic materials, i.e. yttrium-iron garnets ( YIG) and gadolinium-gallium garnets (GGG).