ION PHOTODESORPTION FROM HYDROGENATED SILICON (111) SURFACES

Authors
HELLNER L PHILIPPE L DUJARDIN G RAMAGE MJ ROSE M CIRKEL P DUMAS P
Citation
L. Hellner et al., ION PHOTODESORPTION FROM HYDROGENATED SILICON (111) SURFACES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 78(1-4), 1993, pp. 342-345
Citations number
21
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
78
Issue
1-4
Year of publication
1993
Pages
342 - 345
Database
ISI
SICI code
0168-583X(1993)78:1-4<342:IPFHS(>2.0.ZU;2-M
Abstract
Electronic processes responsible for the breaking of Si-H bonds on hyd rogenated Si (111) surfaces are investigated using a combination of ph otoemission experiments and H+ ion photodesorption studies. H+ desorpt ion is produced after Si(2p) core excitation between 100 and 112 eV. A resonant process in the valence excitation range (20-30 eV) leads als o to H+ desorption. These data confirm that electronic multi-excitatio n rather than single electron excitation is involved in producing ion desorption.