ELECTRICAL CHARACTERISTICS OF SILVER SILICON CONTACTS

We have measured current-voltage (IV) characteristics of Si(111)7 x 7- Ag, Si(111)(square-root 3 x square-root 3)R30-degrees-Ag and Si(100)2 x 1-Ag interfaces, grown in ultrahigh vacuum (UHV). Our data strongly suggest that their Schottky barrier heights (SBHs) are spatially non-u niform. This non-uniformity may be attributed to structural and morpho logical inhomogeneity at the interface. This demonstrates the importan ce of interface structure and growth kinetics for determining macrosco pic properties such as SBH.