SOLID-PHASE REACTION AND EPITAXY OF GD-SILICIDE FILMS ON SI SUBSTRATES

Authors
MOLNAR G PETO G ZSOLDOS E
Citation
G. Molnar et al., SOLID-PHASE REACTION AND EPITAXY OF GD-SILICIDE FILMS ON SI SUBSTRATES, Applied surface science, 70-1, 1993, pp. 466-469
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
70-1
Year of publication
1993
Part
B
Pages
466 - 469
Database
ISI
SICI code
0169-4332(1993)70-1:<466:SRAEOG>2.0.ZU;2-#
Abstract
The solid phase reaction of e-beam evaporated Gd thin film and Si subs trate was investigated by X-ray diffraction and scanning electron micr oscopy. A description has been developed for the kinetics of the react ion, which showed sequential, selective growth of two equilibrium phas es. By strict control of the growth parameters it was possible to reac h hexagonal GdSi1.7 epitaxy on [111] and orthorhombic GdSi2 epitaxy on [100] Si substrates. In the lateral growth mode with a Ti step, Gd-Si showed a rapid and nonuniform reaction.