ALTERNATIVE OHMIC CONTACT SYSTEMS TO N-INP

In this study specific contact resistance (r(c)), Auger electron spect roscopy and morphology results are reported for Au/Pt/Ti, Au/Ni/Ti and Au/Ru/Ti ohmic contact systems to n-InP. These contacts were fabricat ed on Ar+ sputtered and chemically etched InP surfaces. Irrespective o f the pre-metallization treatment, minimum r(c) values of 1 X 10(-5) O MEGA.cm2 were obtained after annealing at 450-degrees-C. It was found that the Ar+ sputtering step is unnecessary in the processing of ohmic contacts to InP. The Au/Ru/Ti contact combination revealed the best s urface morphology after annealing, although the morphologies of all th ree systems were excellent in comparison with the Au/Ni/Au-Ge contact scheme.