SILICIDE EPILAYERS - RECENT DEVELOPMENTS AND PROSPECTS FOR A SI-COMPATIBLE TECHNOLOGY

Semiconducting silicides epitaxially grown on silicon may be promising materials for integrated optoelectronic devices. The structure and th e physical properties of FeSi2 are reviewed in the light of results ob tained with a large variety of in situ and ex situ surface techniques. Dynamical transitions from strained metallic FeSi2 toward relaxed sem iconducting FeSi2 and epitaxial FeSi are clearly demonstrated. New dev elopments for silicide heteroepitaxy on silicon using gas-source molec ular beam epitaxy are also discussed.