STRUCTURAL AND ELECTRICAL-PROPERTIES OF HIGHLY CONDUCTIVE MU-C-SI(P) LAYERS

Thin films of phosphorus doped muc-Si have been prepared in a glow dis charge reactor starting from hydrogen diluted silane using less than 5 watt RF power. Conductivities as high as 41 S/cm have been measured o n samples deposited at 210-degrees-C. The discharge parameters and rea ctor geometry will be examined in order to correlate the really dissip ated RF power to the structural and electrical properties of the mater ial. XRD. SEM, Raman spectroscopy and electrical characterization tech niques have been used. All the samples show clusters that increase wit h the film thickness, while at the same time the crystallite size chan ges in the range 30-75 angstrom.