INVESTIGATION ON ELECTRONIC DENSITY-OF-STATES IN A-SIXC1-X-H FILMS

Citation
F. Demichelis et al., INVESTIGATION ON ELECTRONIC DENSITY-OF-STATES IN A-SIXC1-X-H FILMS, Applied surface science, 70-1, 1993, pp. 664-668
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
01694332
Volume
70-1
Year of publication
1993
Part
B
Pages
664 - 668
Database
ISI
SICI code
0169-4332(1993)70-1:<664:IOEDIA>2.0.ZU;2-4
Abstract
Films of a-SixC1-x:H with different carbon contents were deposited by an ultrahigh vacuum plasma enhanced chemical vapour desposition system and characterized by means of the following experimental techniques: photothermal deflection spectroscopy, constant photocurrent method, op tical modulation spectroscopy and electron spin resonance. The results include data on optical gap, Urbach tail energy, thermal activation e nergy of dark conductivity, density and distribution of defects and qu antum efficiency-mobility-lifetime product. Comparison of the data obt ained with the different techniques is presented and discussed.