P-TYPE MU C-SIC PREPARED BY ECR PECVD USING TETRAMETHYLSILANE GAS

We have prepared a p-type microcrystalline silicon carbon thin film by an electron cyclotron resonance plasma-enhanced chemical vapor deposi tion using Si(CH3)4 + SiH4 + B2H6 + H-2 gas mixture. The p-type muc-Si C had an optical band gap of around 2.4 eV, a dark conductivity of aro und 10(-2) S/cm and a C/Si ratio of around 0.02, which had almost simi lar values as the p-type muc-SiC prepared with a CH4 + SiH4 + B2H6 + H -2 gas mixture.