MICROSTRUCTURAL PROPERTIES OF DC MAGNETRON-SPUTTERED A-SI-H AND A-SI1-XCX-H

A series of a-Si:H and a-Si1-xCx:H samples have been examined by IR an d Raman spectroscopy as a function of hydrogen (5-30at%) and carbon (0 -20at%) content. From medium and near IR measurements, the void densit y and distribution of voids size were estimated. It has been found tha t the void density increases, the void size distribution broadens and its mean value shifts towards higher values as the hydrogen and carbon concentration increases. By the Raman shift analysis it has been conc luded that the increase of hydrogen concentration brings about structu ral relaxation accompanied by decreasing Si-Si bond angle deviation, w hile the increasing of carbon concentration has the opposite effect.