GROWTH OF SILICON MICROCRYSTALS IN THIN SURFACE-LAYERS OF QUARTZ GLASS WITH VACUUM-ULTRAVIOLET LASER PROCESSING

Citation
K. Kurosawa et al., GROWTH OF SILICON MICROCRYSTALS IN THIN SURFACE-LAYERS OF QUARTZ GLASS WITH VACUUM-ULTRAVIOLET LASER PROCESSING, Applied surface science, 70-1, 1993, pp. 712-715
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
ISSN journal
01694332
Volume
70-1
Year of publication
1993
Part
B
Pages
712 - 715
Database
ISI
SICI code
0169-4332(1993)70-1:<712:GOSMIT>2.0.ZU;2-Z
Abstract
Silicon precipitates in surface layers as thin as 50 nm of quartz glas s plates where 9.8 eV photons from an argon excimer laser are irradiat ed, The surfaces have many protrusions having a spherical shape with s ubmicrometer diameter. Raman spectra indicates that they are made of c rystalline silicon. Such a phenomenon has not been observed by 8.5 eV photons from a krypton excimer laser. VUV laser material processing of fers a novel way to produce directly polycrystalline silicon circuits in thin surface layers of quartz glass plates.