LABX THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

LaB(x) (x = 0-6) thin films were prepared by magnetron sputtering usin g a LaB, target and Ar discharge gas. The composition of the films was investigated by the ICP method. It has been found that the compositio n strongly depended on the Ar discharge gas pressure. The film composi tion was mostly stoichiometric (x = 6) at low Ar pressures while the v alue of x decreased with increasing pressure. This nonstoichiometry is interpreted in terms of collision scattering of sputtered particles f rom the target by Monte Carlo simulation. The Ar pressure change induc es the change of the crystal orientation of the films and this change is related with the work function of the film. The most appropriate Ar pressure for the preparation of the films used as electrodes is discu ssed.