CRYSTALLIZATION OF AMORPHOUS THIN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SILICON FILMS - IN-SITU TEM MEASUREMENT OF GRAIN-GROWTH RATES

Authors
GUILLEMET JP DEMAUDUIT B PIERAGGI B CAMPO E SCHEID E
Citation
Jp. Guillemet et al., CRYSTALLIZATION OF AMORPHOUS THIN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SILICON FILMS - IN-SITU TEM MEASUREMENT OF GRAIN-GROWTH RATES, Journal of materials science letters, 12(12), 1993, pp. 910-912
Citations number
13
Categorie Soggetti
Material Science
Journal title
Journal of materials science letters → ACNP
ISSN journal
02618028
Volume
12
Issue
12
Year of publication
1993
Pages
910 - 912
Database
ISI
SICI code
0261-8028(1993)12:12<910:COATLC>2.0.ZU;2-2