IN-SITU RBS ANALYSIS OF ION-BEAM MIXING DURING LOW-ENERGY SPUTTERING

Authors
BRIJS B BENDER H DECOSTER W MOONS R VANDERVORST W
Citation
B. Brijs et al., IN-SITU RBS ANALYSIS OF ION-BEAM MIXING DURING LOW-ENERGY SPUTTERING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 446-449
Citations number
7
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
79
Issue
1-4
Year of publication
1993
Pages
446 - 449
Database
ISI
SICI code
0168-583X(1993)79:1-4<446:IRAOIM>2.0.ZU;2-9
Abstract
Low energy ion sputtering for depth profiling in SIMS, AES and XPS pro duces sputter induced artifacts. These effects are studied by comparin g RBS spectra of the bombarded layer to the original target compositio n. For this purpose an automated RBS chamber has been built combining an Atomika SIMS system and a NEC microprobe RBS beam line. In this art icle the effect of ion beam mixing of Pt on Si and of CoSi2 on Si unde r oxygen bombardment, as well as the preferential sputtering of Si in CoSi2 under Ar bombardment are demonstrated.