COMPARISON OF ANODIZATION SPECTROSCOPY WITH SIMS AND RBS MEASUREMENTSFOR THE CHARACTERIZATION OF NB AL-ALOX/NB JOSEPHSON-JUNCTION STRUCTURES/

Citation
J. Saarilahti et al., COMPARISON OF ANODIZATION SPECTROSCOPY WITH SIMS AND RBS MEASUREMENTSFOR THE CHARACTERIZATION OF NB AL-ALOX/NB JOSEPHSON-JUNCTION STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 474-477
Citations number
6
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
79
Issue
1-4
Year of publication
1993
Pages
474 - 477
Database
ISI
SICI code
0168-583X(1993)79:1-4<474:COASWS>2.0.ZU;2-A
Abstract
The thin tunneling barrier in a Nb/Al-AlO(x)/Nb was characterized by a nodization spectroscopy, SIMS and RBS. From the anodization spectrosco py we can get the film thickness from the voltage span and, most impor tantly, also the sharpness of the Nb/AlO(x) and Al/Nb interfaces aroun d the tunneling barrier. Comparison of the anodization profiles with S IMS depth profiles and RBS spectra shows that the anodization spectros copy can be used to characterize the junction quality.