J. Saarilahti et al., COMPARISON OF ANODIZATION SPECTROSCOPY WITH SIMS AND RBS MEASUREMENTSFOR THE CHARACTERIZATION OF NB AL-ALOX/NB JOSEPHSON-JUNCTION STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 474-477
The thin tunneling barrier in a Nb/Al-AlO(x)/Nb was characterized by a
nodization spectroscopy, SIMS and RBS. From the anodization spectrosco
py we can get the film thickness from the voltage span and, most impor
tantly, also the sharpness of the Nb/AlO(x) and Al/Nb interfaces aroun
d the tunneling barrier. Comparison of the anodization profiles with S
IMS depth profiles and RBS spectra shows that the anodization spectros
copy can be used to characterize the junction quality.