STUDY OF MOCVD GROWN HG1-XCDXTE BY ION-BEAM TECHNIQUES

Authors
JOHNSTON PN RUSSO SP ELLIMAN RG PAIN GN
Citation
Pn. Johnston et al., STUDY OF MOCVD GROWN HG1-XCDXTE BY ION-BEAM TECHNIQUES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 490-492
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
79
Issue
1-4
Year of publication
1993
Pages
490 - 492
Database
ISI
SICI code
0168-583X(1993)79:1-4<490:SOMGHB>2.0.ZU;2-8
Abstract
The environment inside a metal organic chemical vapour deposition (MOC VD) reactor is necessarily rich in carbon and hydrogen, both of which can be important dopants in semiconductor materials. The current work focuses on levels of carbon incorporation into thin films and the rela tionship between carbon concentration and thermodynamic processes. Car bon levels have been determined using the reaction (C(He,p0)N)-C-12-He -3-N-14.