Sj. Pearton et al., APPLICATIONS OF ION-IMPLANTATION IN III-V DEVICE TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 648-650
The use of implantation for doping and isolation of a variety of elect
ronic and photonic III-V compound semiconductor devices will be review
ed. Complex multilayer heterostructure devices like heterojunction bip
olar transistors and strained InGaAs-GaAs quantum well lasers rely on
keV or MeV isolation implants, requiring thick, easily removed masks a
nd post-implant annealing treatments to achieve high isolation resista
nces (greater-than-or-equal-to 10(8) OMEGA cm). The effectiveness of t
he implant isolation technique varies as a function of the bandgap and
elemental composition of the semiconductor. Devices based on GaAs, Al
xGa1-xAs and InGaP are particularly suited to the implant isolation me
thod. The prime dopant species for III-V materials are Si for n-type l
ayers and Be for p-type layers, although there is increasing interest
in the use of C as an acceptor because of its low diffusivity. In the
latter case, a group III species must be co-implanted with the C+ ion
to enhance the occupation of the group V lattice site.