A 2-DIMENSIONAL B-IMPLANTATION MODEL FOR SEMICONDUCTOR PROCESS SIMULATION ENVIRONMENTS

A computationally efficient semi-empirical model has been developed fo r modeling two-dimensional distributions of boron implanted into singl e-crystal silicon. This model accurately and efficiently models the de pth profiles and lateral doping profiles under a masking edge for impl antations as a function of dose, tilt angle, rotation angle, orientati on of the masking edge, and masking layer thickness, in addition to en ergy. This new two-dimensional model is based on the dual-Pearson mode l [A.F. Tasch et al., J. Electrochem. Soc. 136 (1989) 810] for one-dim ensional dopant depth distributions, which provides an accurate method of modeling the depth profile based on approximately 1000 SIMS profil es, and the UT-MARLOWE Monte Carlo ion implantation simulation code [K .M. Klein et al., IEEE Trans. Electron Devices ED-39 (1992) 1614], whi ch provides well-modeled lateral dopant profiles. Combining depth prof ile and lateral profile information from these two models allows this new model to be both accurate and computationally efficient, making it suitable for use in semiconductor process modeling codes.