Experiments have been carried out to investigate the parameters which
can be used to control the mixing profiles, and the width of the inter
mixed layer, in film-substrate systems which are irradiated by high en
ergy ion beams. Thin films of Cu and Ti were deposited on a variety of
substrates such as Si, Ni, Ti, Al, and C. The samples were irradiated
by ion beams of Au, Cu, and Si with energies of 1.5-9 MeV, at room te
mperature, while monitoring the substrate temperature. Typical example
s of the RBS spectra are presented, the extent of the contribution of
binary collisions on the interfacial mixing is discussed. The experime
ntal and simulation results suggest that the interfacial mixing is dom
inated by the binary collisions. The width of the mixed layer and the
degree of mixing can be controlled by ion beam dose and energy.