SURFACE HARDENING BY PROTON IRRADIATION

Authors
ASCHERON C
Citation
C. Ascheron, SURFACE HARDENING BY PROTON IRRADIATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 680-686
Citations number
32
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
79
Issue
1-4
Year of publication
1993
Pages
680 - 686
Database
ISI
SICI code
0168-583X(1993)79:1-4<680:SHBPI>2.0.ZU;2-I
Abstract
Ion implantation induced changes in the microhardness of semiconductor materials are systematically studied in A(III)B(V), A(II)B(VI) and el emental semiconductors. The influences of different types of radiation defects and of implanted atoms are separately considered. It is found that point defects harden material effectively and that the microhard ness is strongly correlated to the radiation hardness.