COLD SILICON DETECTORS FOR TIME-OF-FLIGHT MEASUREMENTS

The advantages of using cold silicon detectors and cold electronic rea dout for time-of-flight measurements are presented. We show how the op eration of silicon strip detectors and associated electronic readout a t low temperature (-55-degrees-C) allows the reduction of several nois e components with respect to the operation at room temperature. Measur ements are reported for single silicon strip detectors displaying the compression of the rise time of charge pulse at low temperature. A noi se reduction with temperature of a cold silicon detector was also meas ured in a testing device operated at -20-degrees-C measured width of t he energy loss distribution of Sr-90 electrons traversing 300 mum sili con detector thickness improves by 10% for temperature variations from +20-degrees-C to -20-degrees-C.