THE MODIFICATION OF NI, PB AND LB FILMS O N THE BEHAVIOR OF N-SI PHOTOELECTRODE

The effects of metal (Ni or Pb) and Langmuir-Blodgett films on the PEC behavior of n-Si have been studied. It is observed that Ni and Pb can improve the energy conversion efficiency and the stability of n-Si. T he modification of LB films prepared with eight different organic comp ounds on n-Si/Ni have been determined and discussed, its efficiency ha s been doubled by the best one (long-chain coumarin LB film). The phot oelectrochemical properties of Si/LB/Al electrode having the MIS struc ture has also been researched. It is discovered that it exhibits good photoelectric effect.