EPITAXIAL-GROWTH OF FE MO/FE(111) AND FE/CR/FE(111) ON SI(111)/

Epitaxial body-centered cubic Mo and Cr films have been grown on the ( 111) surface of alpha-Fe films on Si(111) at 300 and 575 K by electron beam evaporation in ultrahigh vacuum. X-ray diffraction and transmiss ion electron microscopy show that the Mo films are oriented with the ( 111) plane parallel to the alpha-Fe(111) plane and with the Mo[110BAR] direction parallel to the Fe[110BAR] direction in the plane of the su bstrate. The same orientation relationship holds for the Cr films epit axially grown on alpha-Fe(111) surfaces. Epitaxial Fe(111)/Mo(111)/Fe( 111) and Fe(111)/Cr(111)/Fe(111) films have also been grown on Si(111) . This work provides new examples of low temperature epitaxy which can occur at a substrate temperature as low as 0.1 times the melting temp erature of the deposited materials.