TRANSMISSION ELECTRON-MICROSCOPY OF GESE2-FILMS(DELTA THIN)

GeSe2 can exist in both amorphous and crystalline phases. Although mos t semiconductor devices are constructed from crystalline materials, th e use of amorphous materials in devices has high potential. The study of GeSe2 is especially interesting since it has been established that an amorphous-to-crystalline transition can be induced by laser irradia tion. In order to better understand this phenomenon, it is necessary t o study the microstructure of GeSe2 glass. Therefore, transmission ele ctron microscopy studies were undertaken to investigate the degree of crystallinity of GeSe2 glass. It was found that small microcrystallite s with diameters in the range of 100-300 angstrom were embedded in a g lass matrix. These microcrystallites formed larger clusters in some ar eas.