AIGAAS GAAS BURIED QUANTUM-WELL LASER-DIODES BY ONE-TIME SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH ON DIELECTRIC WINDOW STRIPES/

Authors
OGURA M CHEN ZY KANEKO H FUJII S ITOH H MORI M WATANABE M MUKAI S YAJIMA H
Citation
M. Ogura et al., AIGAAS GAAS BURIED QUANTUM-WELL LASER-DIODES BY ONE-TIME SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH ON DIELECTRIC WINDOW STRIPES/, Applied physics letters, 62(26), 1993, pp. 3417-3419
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
26
Year of publication
1993
Pages
3417 - 3419
Database
ISI
SICI code
0003-6951(1993)62:26<3417:AGBQLB>2.0.ZU;2-Y
Abstract
AlGaAs graded-index separate-confinement heterostructure lasers with l ateral mode confinement are realized by one time metalorganic chemical vapor deposition with silicon dioxide stripes as selective masks and current blocking layers. The effect of the active region width on lasi ng characteristics is investigated. The threshold current and external quantum efficiency are around 12 mA and 70%, respectively, for narrow lasers. Elevated waveguide structure formed by the growth-rate differ ence between (100) and sidewall planes was effective for stable latera l mode characteristics.