Epitaxial (001) diamond film were grown on mirror-polished single-crys
talline (001) silicon substrates by microwave plasma chemical vapor de
position from a methane/hydrogen gas mixture. The films were character
ized by means of scanning electron microscopy, Raman spectroscopy, and
x-ray analysis. The results show that the diamond crystallites are or
iented to the silicon substrate with both the (001) planes and the [11
0] directions parallel to the silicon substrate.