OBSERVATION OF THE DX CENTER IN PB-DOPED GAAS

Citation
U. Willke et al., OBSERVATION OF THE DX CENTER IN PB-DOPED GAAS, Applied physics letters, 62(26), 1993, pp. 3467-3469
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
26
Year of publication
1993
Pages
3467 - 3469
Database
ISI
SICI code
0003-6951(1993)62:26<3467:OOTDCI>2.0.ZU;2-R
Abstract
Pb in GaAs introduces a DX center-like (metastable) defect level that is (229 +/- 16) meV above the GAMMA-conduction-band edge, in a similar energetic position to the Si and Sn related DX centers in GaAs. The p ersistent photoconductivity effect quenches at approximately 50 K, ind icating that the barrier to capture for the Pb and Sn dopants are simi lar. Despite the quite different atomic parameters of the Pb atom comp ared with the Sn atom, no significant chemical shifts have been found.