ENHANCEMENT OF LASER-INDUCED DEFECT-INITIATED GA-0 EMISSION FROM GAAS(110) SURFACES BY BR ADSORPTION

Authors
KANASAKI J MATSUURA AY NAKAI Y ITOH N HAGLUND RF
Citation
J. Kanasaki et al., ENHANCEMENT OF LASER-INDUCED DEFECT-INITIATED GA-0 EMISSION FROM GAAS(110) SURFACES BY BR ADSORPTION, Applied physics letters, 62(26), 1993, pp. 3493-3495
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
26
Year of publication
1993
Pages
3493 - 3495
Database
ISI
SICI code
0003-6951(1993)62:26<3493:EOLDGE>2.0.ZU;2-B
Abstract
High sensitivity measurements of Ga emission, produced by laser irradi ation of fluences below the ablation threshold, from a Br-adsorbed GaA s(110) surface were carried out. It was found that bromine adsorption enhances Ga0 emission: the amount of enhancement is linearly proportio nal to the amount of adsorbates but much smaller in the absolute value . The result is interpreted as a Br-induced weakening of the Ga-As bon d on defect sites by Br adsorption.