EFFECT OF GERMANIUM IMPLANTATION ON METAL-OXIDE-SEMICONDUCTOR AVALANCHE INJECTION

The effect of germanium on the hot electron current of a metal-oxide-s emiconductor device has been studied by avalanche electron injection f rom the silicon to the silicon dioxide. Different doses of germanium r anging from 10(12) to 10(15) atoms/cm2 are implanted into the Si-SiO2 interface. The ''lucky'' hot electron population is suppressed by the germanium implantation. We have used the charge-voltage technique to m easure the interface state density. The interface state density increa se caused by the Ge implantation is negligible if the dose is lower th an 10(14) Ge/cm2. Our results show that the Ge implantation is a promi sing method to solve the hot carrier problem that has become important in submicrometer devices.