INVESTIGATION OF RAPID-THERMAL-OXIDIZED POROUS SILICON

We report that the photoluminescence of porous Si that was quenched by low-temperature thermal annealing was restored by further annealing i n an oxygen atmosphere at high temperature (750-degrees-C less-than-or -equal-to T less-than-or-equal-to 1100-degrees-C). The intensity of th e photoluminescence recovered to near the as-anodized value and the pe ak wavelength was red shifted by approximately 100 nm. The oxidized po rous Si has been found to have lower resistance and higher photoelectr ic efficiency than as-anodized material.