HOT-ELECTRON DYNAMICS STUDY BY TERAHERTZ RADIATION FROM LARGE-APERTURE GAAS P-I-N-DIODES

Authors
XU L HU BB XIN W AUSTON DH MORSE JD
Citation
L. Xu et al., HOT-ELECTRON DYNAMICS STUDY BY TERAHERTZ RADIATION FROM LARGE-APERTURE GAAS P-I-N-DIODES, Applied physics letters, 62(26), 1993, pp. 3507-3509
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
26
Year of publication
1993
Pages
3507 - 3509
Database
ISI
SICI code
0003-6951(1993)62:26<3507:HDSBTR>2.0.ZU;2-A
Abstract
Subpicosecond electromagnetic pulses having tetrahertz (THz) bandwidth s have been generated from large aperture GaAs p-i-n diodes under bias by illumination with femtosecond optical pulses. The amplitude and sh ape of the radiated pulses change with the applied bias and the wavele ngth of the optical pulses illuminating the p-i-n diode. Comparing thi s radiation with THz radiation from large aperture Si p-i-n diodes pro vides evidence of velocity overshoot in the transient response of opti cally injected electrons in GaAs.