LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS

Citation
D. Kumar et al., LARGE CRITICAL CURRENTS AND IMPROVED EPITAXY OF LASER-ABLATED AG-DOPED YBA2CU3O7-DELTA THIN-FILMS, Applied physics letters, 62(26), 1993, pp. 3522-3524
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
26
Year of publication
1993
Pages
3522 - 3524
Database
ISI
SICI code
0003-6951(1993)62:26<3522:LCCAIE>2.0.ZU;2-3
Abstract
Microstructure and critical current densities of laser ablated YBa2Cu3 O7-delta thin films doped with 2-20 wt. % Ag have been studied. A crit ical current density as high as 1.4 X 10(7) A cm-2 at 77 K has been re alized on [100] SrTiO3 substrates with YBaCuO films doped with 5 wt. % Ag which has been found to be the optimum. Evidence indicates that th e improved microstructure and epitaxy which is a consequence of grain enlargement and alignment caused by Ag is responsible for the high val ues of critical currents observed.