ORIGIN OF SHORT-PERIOD OSCILLATION NEAR GAAS BAND-GAP ENERGY IN PHOTOREFLECTANCE

Authors
HWANG I KIM JE PARK HY LEE CD NOH SK
Citation
I. Hwang et al., ORIGIN OF SHORT-PERIOD OSCILLATION NEAR GAAS BAND-GAP ENERGY IN PHOTOREFLECTANCE, Solid state communications, 102(4), 1997, pp. 283-286
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
102
Issue
4
Year of publication
1997
Pages
283 - 286
Database
ISI
SICI code
0038-1098(1997)102:4<283:OOSONG>2.0.ZU;2-0
Abstract
We investigated the origin of the short-period oscillation (SPO) in ph otoreflectance (PR) spectra of selectively doped GaAs samples. In the PR spectra of the samples the SPO are separated into two distinct sign als. The intensity of the lower-energy signal decreases rapidly as the temperature is lowered. Therefore, we conclude that the short-period oscillation is due to the hole-ionized acceptor (h-A(-)) pair modulati on and the free exciton modulation in the cap layer. (C) 1997 Elsevier Science Ltd.