THE ELECTRONIC-STRUCTURE OF TIN AND VN - X-RAY AND ELECTRON-SPECTRA COMPARED TO BAND-STRUCTURE CALCULATIONS

Citation
L. Soriano et al., THE ELECTRONIC-STRUCTURE OF TIN AND VN - X-RAY AND ELECTRON-SPECTRA COMPARED TO BAND-STRUCTURE CALCULATIONS, Solid state communications, 102(4), 1997, pp. 291-296
Citations number
37
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
102
Issue
4
Year of publication
1997
Pages
291 - 296
Database
ISI
SICI code
0038-1098(1997)102:4<291:TEOTAV>2.0.ZU;2-I
Abstract
We studied the electronic structure of TiN and VN by means of band str ucture calculations and spectroscopic techniques. The band structure c alculations show that the bonding in these compounds is mostly covalen t. The Fermi level intersects the transition metal 3d bands giving ris e to the metallic conductivity observed in these nitrides. The particu larly large stability of these compounds is due to filled metal 3d-nit rogen 2p bonding states. The X-ray photoemission (XPS) and the N 1s X- ray absorption (XAS) spectra are related to the occupied electronic st ates in the valence band and to the unoccupied electronic states in th e conduction band respectively. (C) 1997 Elsevier Science Ltd.