EXPERIMENTAL-EVIDENCE OF A METAL-INSULATOR-TRANSITION IN A HALF-FILLED LANDAU-LEVEL

Authors
LIANG CT FROST JEF SIMMONS MY RITCHIE DA PEPPER M
Citation
Ct. Liang et al., EXPERIMENTAL-EVIDENCE OF A METAL-INSULATOR-TRANSITION IN A HALF-FILLED LANDAU-LEVEL, Solid state communications, 102(4), 1997, pp. 327-330
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
102
Issue
4
Year of publication
1997
Pages
327 - 330
Database
ISI
SICI code
0038-1098(1997)102:4<327:EOAMIA>2.0.ZU;2-X
Abstract
We have measured the low-temperature transport properties of a high-mo bility front-gated GaAs/Al0.33Ga0.67As heterostructure. By changing th e applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor nu = 1/2, where the system ca n be described by the composite fermion picture, we observe a crossove r from metallic to insulating behaviour as the disorder is increased. Experimental results and theoretical prediction are compared. (C) 1997 Elsevier Science Ltd.