EFFECTS OF THERMAL-CONVECTION ON GROWTH-RATE OF GAN BY MOVPE

It was demonstrated that GaN growth rate by MOVPE depended on the reac tor pressure, inclined angle of slanted susceptor, and the temperature gradient over substrate in the vertical direction, which were contrib uted to the thermal convection in gas-phase. The growth process was co ntrolled by mass transported limited, that can be classified into the input rate limited and the diffusion limited, or their combination dep ending on the configuration of reactor and the experimental conditions . (C) 1997 Elsevier Science Ltd.