GATING CHARGE DIFFERENCES BETWEEN 2 VOLTAGE-GATED K+ CHANNELS ARE DUETO THE SPECIFIC CHARGE CONTENT OF THEIR RESPECTIVE S4 REGIONS

Citation
De. Logothetis et al., GATING CHARGE DIFFERENCES BETWEEN 2 VOLTAGE-GATED K+ CHANNELS ARE DUETO THE SPECIFIC CHARGE CONTENT OF THEIR RESPECTIVE S4 REGIONS, Neuron, 10(6), 1993, pp. 1121-1129
Citations number
37
Categorie Soggetti
Neurosciences
Journal title
NeuronACNP
ISSN journal
08966273
Volume
10
Issue
6
Year of publication
1993
Pages
1121 - 1129
Database
ISI
SICI code
0896-6273(1993)10:6<1121:GCDB2V>2.0.ZU;2-P
Abstract
Voltage-gated ion channels that differ in their primary amino acid seq uence in the putative voltage sensor, the S4 region, show distinct vol tage-sensing characteristics. In this study, we directly compared two voltage-gated K+ channels, the mammalian RCK1 with the Drosophila Shab 11, and correlated the specific amino acid content of their respective S4 regions with the distinct voltage-sensing properties they exhibit. We find that specific differences in the charge content of the S4 reg ion are sufficient to account for the distinct gating valence of each channel. However, differences in residues inside the S4 region are not sufficient to account for each channel's characteristic voltage range of activation.