INFLUENCE OF HEAT-TREATMENT ON STRUCTURE AND PROPERTIES OF ELECTRODEPOSITED CDSE OR CD(TE, SE) SEMICONDUCTING COATINGS

CdSe and mixed CdSe and CdTe semiconducting thin films, prepared by ca thodic electrodeposition from an acid sulphate solution, containing se lenium and tellurium oxides in various amounts, were submitted to a th ermal treatment at temperatures ranging between 400 and 520-degrees-C. The crystal structure, composition, band-gap width and photoelectroch emical response of the annealed materials was investigated. It was fou nd that all materials, rich in selenium, change their structure from c ubic (zinc blende) to hexagonal (wurtzite), when annealed within the a bove mentioned region of temperatures. In many cases, an improvement o f their semiconducting properties has been also confirmed.